Mettre en place une plate - forme commerciale fiable pour les fabricants et les fournisseurs dans le monde entier.
6 Produits
Photo. Type Prix Quantité Stocks Fabricant Description Series Part Status Packaging Current - Supply Operating Temperature Mounting Type Package / Case Output Type Supplier Device Package Number of Circuits Amplifier Type Current - Output / Channel Slew Rate Voltage - Supply, Single/Dual (±) Gain Bandwidth Product Current - Input Bias Voltage - Input Offset
LM6132BIN/NOPB
Unité
$4.0000
Regarder
RFQ
656
On a de la marchandise.
Texas Instruments IC OPAMP GP 11MHZ RRO 8DIP - Active Tube 390µA -40°C ~ 85°C Through Hole 8-DIP (0.300", 7.62mm) Rail-to-Rail 8-PDIP 2 General Purpose 4mA 14 V/µs 1.8 V ~ 24 V, ±0.9 V ~ 12 V 11MHz 125nA 1.7mV
LM6132BIN
Regarder
RFQ
2,525
On a de la marchandise.
Texas Instruments IC OPAMP GP 11MHZ RRO 8DIP - Obsolete Tube 390µA -40°C ~ 85°C Through Hole 8-DIP (0.300", 7.62mm) Rail-to-Rail 8-PDIP 2 General Purpose 4mA 14 V/µs 1.8 V ~ 24 V, ±0.9 V ~ 12 V 11MHz 125nA 1.7mV
LM6132AIN
Regarder
RFQ
1,556
On a de la marchandise.
Texas Instruments IC OPAMP GP 11MHZ RRO 8DIP - Obsolete Tube 390µA -40°C ~ 85°C Through Hole 8-DIP (0.300", 7.62mm) Rail-to-Rail 8-PDIP 2 General Purpose 4mA 14 V/µs 1.8 V ~ 24 V, ±0.9 V ~ 12 V 11MHz 125nA 1.7mV
LM6132BIN/NOPB
Unité
$4.0000
Regarder
RFQ
656
On a de la marchandise.
Texas Instruments IC OPAMP GP 11MHZ RRO 8DIP - Active Tube 390µA -40°C ~ 85°C Through Hole 8-DIP (0.300", 7.62mm) Rail-to-Rail 8-PDIP 2 General Purpose 4mA 14 V/µs 1.8 V ~ 24 V, ±0.9 V ~ 12 V 11MHz 125nA 1.7mV
LM6132BIN
Regarder
RFQ
2,525
On a de la marchandise.
Texas Instruments IC OPAMP GP 11MHZ RRO 8DIP - Obsolete Tube 390µA -40°C ~ 85°C Through Hole 8-DIP (0.300", 7.62mm) Rail-to-Rail 8-PDIP 2 General Purpose 4mA 14 V/µs 1.8 V ~ 24 V, ±0.9 V ~ 12 V 11MHz 125nA 1.7mV
LM6132AIN
Regarder
RFQ
1,556
On a de la marchandise.
Texas Instruments IC OPAMP GP 11MHZ RRO 8DIP - Obsolete Tube 390µA -40°C ~ 85°C Through Hole 8-DIP (0.300", 7.62mm) Rail-to-Rail 8-PDIP 2 General Purpose 4mA 14 V/µs 1.8 V ~ 24 V, ±0.9 V ~ 12 V 11MHz 125nA 1.7mV