- Input Type :
- Package / Case :
- Channel Type :
- Current - Peak Output (Source, Sink) :
- Rise / Fall Time (Typ) :
- Filtre sélectionné :
39 Produits
| Photo. | Type | Prix | Quantité | Stocks | Fabricant | Description | Series | Part Status | Packaging | Input Type | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Voltage - Supply | Channel Type | Driven Configuration | Number of Drivers | Gate Type | Logic Voltage - VIL, VIH | Current - Peak Output (Source, Sink) | Rise / Fall Time (Typ) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Regarder |
1,222
On a de la marchandise.
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IXYS Integrated Circuits Division | 2A 8 DIP DUAL INVERTING | - | Active | Tube | Inverting | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 4.5 V ~ 35 V | Independent | Low-Side | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 2A, 2A | 7.5ns, 6.5ns | ||
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Regarder |
2,111
On a de la marchandise.
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IXYS Integrated Circuits Division | 2A MOSFET 8 DIP DUAL INV/NON-INV | - | Active | Tube | Inverting, Non-Inverting | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 4.5 V ~ 35 V | Independent | Low-Side | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 2A, 2A | 7.5ns, 6.5ns | ||
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Regarder |
2,914
On a de la marchandise.
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IXYS Integrated Circuits Division | MOSFET DVR ULT FAST 14A 8-DIP | - | Active | Tube | Non-Inverting | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 4.5 V ~ 35 V | Single | Low-Side | 1 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 14A, 14A | 25ns, 18ns | ||
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Regarder |
3,241
On a de la marchandise.
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IXYS Integrated Circuits Division | MOSFET N-CH 2A DUAL LO SIDE 8-DI | - | Active | Tube | Non-Inverting | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 4.5 V ~ 35 V | Independent | Low-Side | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 2A, 2A | 7.5ns, 6.5ns | ||
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Regarder |
886
On a de la marchandise.
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IXYS Integrated Circuits Division | IC GATE DVR 4A INV 8-DIP | - | Active | Tube | Inverting | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 4.5 V ~ 35 V | Independent | Low-Side | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 4A, 4A | 9ns, 8ns | ||
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Regarder |
1,482
On a de la marchandise.
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IXYS Integrated Circuits Division | IC GATE DVR 4A DUAL ENABLE 8DIP | - | Active | Tube | Non-Inverting | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 4.5 V ~ 35 V | Independent | Low-Side | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 4A, 4A | 9ns, 8ns | ||
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Regarder |
3,942
On a de la marchandise.
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IXYS Integrated Circuits Division | IC GATE DVR 4A DUAL NONINV 8DIP | - | Active | Tube | Non-Inverting | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm), 6 Leads | 8-DIP | 4.5 V ~ 35 V | Independent | Low-Side | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 4A, 4A | 9ns, 8ns | ||
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Regarder |
2,164
On a de la marchandise.
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IXYS Integrated Circuits Division | IC GATE DVR 9A NON-INV 8-DIP | - | Active | Tube | Non-Inverting | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 4.5 V ~ 35 V | Single | Low-Side | 1 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 9A, 9A | 22ns, 15ns | ||
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Regarder |
2,541
On a de la marchandise.
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IXYS Integrated Circuits Division | IC GATE DVR 4A DUAL HS 8DIP | - | Active | Tube | Inverting, Non-Inverting | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 4.5 V ~ 35 V | Independent | Low-Side | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 4A, 4A | 9ns, 8ns | ||
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Regarder |
1,443
On a de la marchandise.
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IXYS Integrated Circuits Division | IC GATE DVR 9A NON-INV 8DIP | - | Active | Tube | Non-Inverting | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 4.5 V ~ 35 V | Single | Low-Side | 1 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 9A, 9A | 22ns, 15ns | ||
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Regarder |
3,760
On a de la marchandise.
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IXYS Integrated Circuits Division | IC GATE DVR 9A NON-INV 8DIP | - | Active | Tube | Inverting | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 4.5 V ~ 35 V | Single | Low-Side | 1 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 9A, 9A | 22ns, 15ns | ||
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Regarder |
2,574
On a de la marchandise.
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IXYS Integrated Circuits Division | 14A 8 PIN DIP NON INVERTING | - | Active | Tube | Non-Inverting | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 4.5 V ~ 35 V | Single | Low-Side | 1 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 14A, 14A | 25ns, 18ns | ||
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Regarder |
770
On a de la marchandise.
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IXYS Integrated Circuits Division | 14A 8 PIN DIP INVERTING | - | Active | Tube | Inverting | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 4.5 V ~ 35 V | Single | Low-Side | 1 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 14A, 14A | 25ns, 18ns | ||
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Regarder |
1,222
On a de la marchandise.
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IXYS Integrated Circuits Division | 2A 8 DIP DUAL INVERTING | - | Active | Tube | Inverting | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 4.5 V ~ 35 V | Independent | Low-Side | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 2A, 2A | 7.5ns, 6.5ns | ||
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Regarder |
2,111
On a de la marchandise.
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IXYS Integrated Circuits Division | 2A MOSFET 8 DIP DUAL INV/NON-INV | - | Active | Tube | Inverting, Non-Inverting | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 4.5 V ~ 35 V | Independent | Low-Side | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 2A, 2A | 7.5ns, 6.5ns | ||
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Regarder |
2,914
On a de la marchandise.
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IXYS Integrated Circuits Division | MOSFET DVR ULT FAST 14A 8-DIP | - | Active | Tube | Non-Inverting | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 4.5 V ~ 35 V | Single | Low-Side | 1 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 14A, 14A | 25ns, 18ns | ||
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Regarder |
3,241
On a de la marchandise.
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IXYS Integrated Circuits Division | MOSFET N-CH 2A DUAL LO SIDE 8-DI | - | Active | Tube | Non-Inverting | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 4.5 V ~ 35 V | Independent | Low-Side | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 2A, 2A | 7.5ns, 6.5ns | ||
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Regarder |
886
On a de la marchandise.
|
IXYS Integrated Circuits Division | IC GATE DVR 4A INV 8-DIP | - | Active | Tube | Inverting | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 4.5 V ~ 35 V | Independent | Low-Side | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 4A, 4A | 9ns, 8ns | ||
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Regarder |
1,482
On a de la marchandise.
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IXYS Integrated Circuits Division | IC GATE DVR 4A DUAL ENABLE 8DIP | - | Active | Tube | Non-Inverting | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 4.5 V ~ 35 V | Independent | Low-Side | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 4A, 4A | 9ns, 8ns | ||
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Regarder |
3,942
On a de la marchandise.
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IXYS Integrated Circuits Division | IC GATE DVR 4A DUAL NONINV 8DIP | - | Active | Tube | Non-Inverting | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm), 6 Leads | 8-DIP | 4.5 V ~ 35 V | Independent | Low-Side | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 4A, 4A | 9ns, 8ns | ||
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Regarder |
2,164
On a de la marchandise.
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IXYS Integrated Circuits Division | IC GATE DVR 9A NON-INV 8-DIP | - | Active | Tube | Non-Inverting | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 4.5 V ~ 35 V | Single | Low-Side | 1 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 9A, 9A | 22ns, 15ns | ||
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Regarder |
2,541
On a de la marchandise.
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IXYS Integrated Circuits Division | IC GATE DVR 4A DUAL HS 8DIP | - | Active | Tube | Inverting, Non-Inverting | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 4.5 V ~ 35 V | Independent | Low-Side | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 4A, 4A | 9ns, 8ns | ||
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Regarder |
1,443
On a de la marchandise.
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IXYS Integrated Circuits Division | IC GATE DVR 9A NON-INV 8DIP | - | Active | Tube | Non-Inverting | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 4.5 V ~ 35 V | Single | Low-Side | 1 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 9A, 9A | 22ns, 15ns | ||
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Regarder |
3,760
On a de la marchandise.
|
IXYS Integrated Circuits Division | IC GATE DVR 9A NON-INV 8DIP | - | Active | Tube | Inverting | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 4.5 V ~ 35 V | Single | Low-Side | 1 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 9A, 9A | 22ns, 15ns | ||
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Regarder |
2,574
On a de la marchandise.
|
IXYS Integrated Circuits Division | 14A 8 PIN DIP NON INVERTING | - | Active | Tube | Non-Inverting | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 4.5 V ~ 35 V | Single | Low-Side | 1 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 14A, 14A | 25ns, 18ns | ||
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Regarder |
770
On a de la marchandise.
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IXYS Integrated Circuits Division | 14A 8 PIN DIP INVERTING | - | Active | Tube | Inverting | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 4.5 V ~ 35 V | Single | Low-Side | 1 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 14A, 14A | 25ns, 18ns | ||
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Regarder |
1,222
On a de la marchandise.
|
IXYS Integrated Circuits Division | 2A 8 DIP DUAL INVERTING | - | Active | Tube | Inverting | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 4.5 V ~ 35 V | Independent | Low-Side | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 2A, 2A | 7.5ns, 6.5ns | ||
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Regarder |
2,111
On a de la marchandise.
|
IXYS Integrated Circuits Division | 2A MOSFET 8 DIP DUAL INV/NON-INV | - | Active | Tube | Inverting, Non-Inverting | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 4.5 V ~ 35 V | Independent | Low-Side | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 2A, 2A | 7.5ns, 6.5ns | ||
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Regarder |
2,914
On a de la marchandise.
|
IXYS Integrated Circuits Division | MOSFET DVR ULT FAST 14A 8-DIP | - | Active | Tube | Non-Inverting | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 4.5 V ~ 35 V | Single | Low-Side | 1 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 14A, 14A | 25ns, 18ns | ||
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Regarder |
3,241
On a de la marchandise.
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IXYS Integrated Circuits Division | MOSFET N-CH 2A DUAL LO SIDE 8-DI | - | Active | Tube | Non-Inverting | -55°C ~ 150°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-DIP | 4.5 V ~ 35 V | Independent | Low-Side | 2 | IGBT, N-Channel, P-Channel MOSFET | 0.8V, 3V | 2A, 2A | 7.5ns, 6.5ns |
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